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| Transistor 2SD2457 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm s Features q q q 4.50.1 1.60.2 1.50.1 1.0-0.2 +0.1 High collector to emitter voltage VCEO. Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.60.1 0.4max. 45 0.40.08 0.50.08 1.50.1 3.00.15 4.0-0.20 0.40.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25C) Ratings 50 40 5 3 1.5 1 150 -55 ~ +150 1cm2 Unit V V V A A W C C 1:Base 2:Collector 3:Emitter 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg marking EIAJ:SC-62 Mini Power Type Package Marking symbol : 1Y Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *1h FE Rank classification (Ta=25C) Symbol ICBO ICEO IEBO VCBO VCEO hFE*1 VCE(sat) VBE(sat) fT Cob Conditions VCB = 20V, IE = 0 VCE = 10V, IB = 0 VEB = 5V, IE = 0 IC = 1mA, IE = 0 IC = 2mA, IB = 0 VCE = 5V, IC = 1A*2 IC = 1.5A, IB = 0.15A*2 IC = 2A, IB = 0.2A*2 VCB = 5V, IE = -0.5A*2, f = 200MHz 150 45 *2 min typ max 1 100 10 Unit A A A V V 50 40 80 120 220 1 1.5 MHz pF Pulse measurement VCB = 20V, IE = 0, f = 1MHz Rank hFE Q 80 ~ 160 R 120 ~ 220 2.50.1 +0.25 V V 1 Transistor PC -- Ta 1.2 4.0 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 3.5 2SD2457 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IB=40mA 35mA 30mA 2.5 2.0 1.5 10mA 1.0 0.5 5mA 25mA 20mA 15mA 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 Ta=75C 25C -25C VCE(sat) -- IC IC/IB=10 Collector power dissipation PC (W) 1.0 Collector current IC (A) 3.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC IC/IB=10 300 VCE=5V 240 fT -- I E VCB=5V Ta=25C Base to emitter saturation voltage VBE(sat) (V) 250 Transition frequency fT (MHz) 1 3 10 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C Forward current transfer ratio hFE 200 200 Ta=75C 150 25C -25C 100 160 120 80 50 40 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Emitter current IE (A) Cob -- VCB 120 Collector output capacitance Cob (pF) 100 IE=0 f=1MHz Ta=25C 80 60 40 20 0 1 3 10 30 100 Collector to base voltage VCB (V) 2 |
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